MT48LC16M4A2_99 Datasheet, PDF (1/55 Pages) Micron Technology – SYNCHRONOUS DRAM

SYNCHRONOUS
DRAM
FEATURES
• PC66-, PC100- and PC133-compliant
• 143 MHz, graphical 4 Meg x 16 option
• Fully synchronous; all signals registered on positive
edge of system clock
• Internal pipelined operation; column address can
be changed every clock cycle
• Internal banks for hiding row access/precharge
• Programmable burst lengths: 1, 2, 4, 8 or full page
• Auto Precharge, includes CONCURRENT AUTO
PRECHARGE, and Auto Refresh Modes
• Self Refresh Modes: standard and low power
• 64ms, 4,096-cycle refresh
• LVTTL-compatible inputs and outputs
• Single +3.3V ±0.3V power supply
OPTIONS
MARKING
• Configurations
16 Meg x 4 (4 Meg x 4 x 4 banks) 16M4
8 Meg x 8 (2 Meg x 8 x 4 banks) 8M8
4 Meg x 16 (1 Meg x 16 x 4 banks) 4M16
• WRITE Recovery (^tWR)
t_{WR = “2 CLK”}1
A2
• Plastic Package - OCPL²
54-pin TSOP II (400 mil)
TG
• Timing (Cycle Time)
10ns @ CL2 (PC100)
7.5ns @ CL3 (PC133)
7.5ns @ CL2 (PC133)
7ns @ CL3 (143 MHz)
-8E
-75
-7E
-7G³
• Self Refresh
Standard
Low Power
None
L
• Operating Temperature Range
Commercial (0°C to +70°C)
Extended (-40°C to +85°C)
None
IT⁴
Part Number Example:
MT48LC8M8A2TG-8E
NOTE: 1. Refer to Micron Technical Note TN-48-05.
2. Off-center parting line.
3. Available on 4 Meg x 16.
4. Available on x8, x16, -8E.
64Mb: x4, x8, x16
SDRAM
MT48LC16M4A2 - 4 Meg x 4 x 4 banks
MT48LC8M8A2 - 2 Meg x 8 x 4 banks
MT48LC4M16A2 - 1 Meg x 16 x 4 banks
For the latest data sheet, please refer to the Micron Web
site: www.micron.com/mti/msp/html/datasheet.html
PIN ASSIGNMENT (Top View)
x4 x8 x16
-
- VDD
NC DQ0 DQ0
-
- VDDQ
NC NC DQ1
DQ0 DQ1 DQ2
- - VssQ
NC NC DQ3
NC DQ2 DQ4
-
- VDDQ
NC NC DQ5
DQ1 DQ3 DQ6
- - VssQ
NC NC DQ7
-
- VDD
NC NC DQML
- - WE#
- - CAS#
- - RAS#
- - CS#
- - BA0
- - BA1
- - A10
- - A0
- - A1
- - A2
- - A3
-
- VDD
54-Pin TSOP
1
54
2
53
3
52
4
51
5
50
6
49
7
48
8
47
9
46
10
45
11
44
12
43
13
42
14
41
15
40
16
39
17
38
18
37
19
36
20
35
21
34
22
33
23
32
24
31
25
30
26
29
27
28
x16 x8 x4
Vss - -
DQ15 DQ7 NC
VssQ - -
DQ14 NC NC
DQ13 DQ6 DQ3
VDDQ -
-
DQ12 NC NC
DQ11 DQ5 NC
VssQ - -
DQ10 NC NC
DQ9 DQ4 DQ2
VDDQ -
-
DQ8 NC NC
Vss - -
NC - -
DQMH DQM DQM
CLK - -
CKE - -
NC - -
A11 - -
A9 - -
A8 - -
A7 - -
A6 - -
A5 - -
A4 - -
Vss - -
Note: The # symbol indicates signal is active LOW. A dash (–)
indicates x8 and x4 pin function is same as x16 pin function.
Configuration
Refresh Count
Row Addressing
Bank Addressing
Column Addressing
16 Meg x 4
4 Meg x 4 x 4 banks
4K
4K (A0-A11)
4 (BA0, BA1)
1K (A0-A9)
8 Meg x 8
2 Meg x 8 x 4 banks
4K
4K (A0-A11)
4 (BA0, BA1)
512 (A0-A8)
4 Meg x 16
1 Meg x 16 x 4 banks
4K
4K (A0-A11)
4 (BA0, BA1)
256 (A0-A7)
KEY TIMING PARAMETERS
SPEED
GRADE
-7G
-7E
-75
-8E
-7E
-75
-8E
CLOCK
FREQUENCY
143 MHz
143 MHz
133 MHz
125 MHz
133 MHz
100 MHz
100 MHz
ACCESS TIME SETUP
CL = 2* CL = 3* TIME
–
6ns
2ns
–
5.4ns 1.5ns
–
5.4ns 1.5ns
–
6ns
2ns
5.4ns
–
1.5ns
6ns
–
1.5ns
6ns
–
2ns
HOLD
TIME
1ns
0.8ns
0.8ns
1ns
0.8ns
0.8ns
1ns
* CL = CAS (READ) latency
64Mb: x4, x8, x16 SDRAM
64MSDRAM.p65 – Rev. 11/99
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©1999, Micron Technology, Inc.