TC1054 Datasheet, PDF (8/18 Pages) TelCom Semiconductor, Inc – 50mA CMOS LDO WITH SHUTDOWN AND ERROR OUTPUT

TC1054/TC1055/TC1186
5.0 TYPICAL CHARACTERISTICS
(Unless Otherwise Specified, All Parts Are Measured At Temperature = 25°C)
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein are
not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
0.020
0.018
0.016
0.014
0.012
0.010
0.008
0.006
0.004
0.002
0.000
Dropout Voltage vs. Temperature (V_OUT = 3.3V)
I_LOAD = 10mA
C_IN = 1µF
C_OUT = 1µF
-40 -20
0
20
50
70 125
TEMPERATURE (°C)
0.200
0.180
0.160
0.140
0.120
0.100
0.080
0.060
0.040
0.020
0.000
Dropout Voltage vs. Temperature (V_OUT = 3.3V)
I_LOAD = 100mA
C_IN = 1µF
C_OUT = 1µF
-40 -20
0
20
50
70 125
TEMPERATURE (°C)
0.100
0.090
0.080
0.070
0.060
0.050
0.040
0.030
0.020
0.010
0.000
Dropout Voltage vs. Temperature (V_OUT = 3.3V)
I_LOAD = 50mA
C_IN = 1µF
C_OUT = 1µF
-40 -20
0
20 50 70 125
TEMPERATURE (°C)
0.300
0.250
Dropout Voltage vs. Temperature (V_OUT = 3.3V)
I_LOAD = 150mA
0.200
0.150
0.100
0.050
C_IN = 1µF
C_OUT = 1µF
0.000
-40 -20
0
20 50 70 125
TEMPERATURE (°C)
Ground Current vs. V_IN (V_OUT = 3.3V)
90
80
I_LOAD = 10mA
70
60
50
40
30
20
10
C_IN = 1µF
C_OUT = 1µF
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5
V_IN (V)
Ground Current vs. V_IN (V_OUT = 3.3V)
90
80
I_LOAD = 100mA
70
60
50
40
30
20
10
C_IN = 1µF
C_OUT = 1µF
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5
V_IN (V)
DS21350B-page 8
© 2002 Microchip Technology Inc.