TC1054 Datasheet, PDF (3/18 Pages) TelCom Semiconductor, Inc – 50mA CMOS LDO WITH SHUTDOWN AND ERROR OUTPUT

TC1054/TC1055/TC1186
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings*
Input Voltage......................................................... 6.5V
Output Voltage ...........................(-0.3V) to (V_IN + 0.3V)
Power Dissipation ............... Internally Limited (Note 6)
Maximum Voltage on Any Pin ........ V_IN +0.3V to -0.3V
Operating Temperature Range ......-40°C < T_J < 125°C
Storage Temperature ......................... -65°C to +150°C
*Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
TC1054/TC1055/TC1186 ELECTRICAL SPECIFICATIONS
Electrical Characteristics: V_IN = V_OUT + 1V, I_L = 100µA, C_L = 3.3µF, SHDN > V_IH, T_A = 25°C, unless otherwise noted. Boldface
type specifications apply for junction temperatures of -40°C to +125°C.
Symbol
Parameter
Min
Typ
Max
Units
Test Conditions
V_IN
I_OUTMAX
Input Operating Voltage
Maximum Output Current
2.7
—
50
—
100
—
150
—
6.0
V Note 8
—
mA TC1054
—
TC1055
—
TC1186
V_OUT
TCV_OUT
Output Voltage
V_OUT Temperature Coefficient
V_R – 2.5%
—
—
V_R ±0.5%
20
40
V_R + 2.5%
—
—
V
ppm/°C
Note 1
Note 2
∆V_OUT/∆V_IN Line Regulation
—
∆V_OUT/V_OUT Load Regulation TC1054; TC1055
—
TC1186
—
0.05
0.5
0.5
0.35
2
3
% (V_R + 1V) ≤ V_IN ≤ 6V
%
I_L = 0.1mA to I_OUTMAX
I_L = 0.1mA to I_OUTMAX
(Note 3)
V_IN-V_OUT
Dropout Voltage
—
—
—
TC1055; TC1186
—
TC1186
—
2
—
mV I_L = 100µA
65
—
I_L = 20mA
85
120
I_L = 50mA
180
250
I_L = 100mA
270
400
I_L = 150mA (Note 4)
I_IN
Supply Current
—
50
80
µA SHDN = V_IH, I_L = 0
I_INSD
Shutdown Supply Current
—
0.05
0.5
µA SHDN = 0V
PSRR
Power Supply Rejection Ratio
—
64
—
dB F_RE ≤ 1kHz
I_OUTSC
Output Short Circuit Current
—
300
450
mA V_OUT = 0V
∆V_OUT/∆P_D Thermal Regulation
—
0.04
—
V/W Notes 5, 6
T_SD
Thermal Shutdown Die Temperature
—
160
—
°C
∆T_SD
Thermal Shutdown Hysteresis
—
10
—
°C
eN
Output Noise
—
260
—
nV/√Hz I_L = I_OUTMAX
Note 1: V_R is the regulator output voltage setting. For example: V_R = 1.8V, 2.5V, 2.7V, 2.85V, 3.0V, 3.3V, 3.6V, 4.0V, 5.0V.
2: TC V_OUT = (V_OUTMAX – V_OUTMIN)x 10⁶
V_OUT x ∆T
3: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range
from 0.1mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.
4: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value.
5: Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or
line regulation effects. Specifications are for a current pulse equal to I_LMAX at V_IN = 6V for T = 10 msec.
6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the
thermal resistance from junction-to-air (i.e., T_A, T_J, θ_JA). Exceeding the maximum allowable power dissipation causes the device to initiate
thermal shutdown. Please see Section 4.0 Thermal Considerations for more details.
7: Hysteresis voltage is referenced by V_R.
8: The minimum V_IN has to justify the conditions: V_IN ≥ V_R + V_DROPOUT and V_IN ≥ 2.7V for I_L = 0.1mA to I_OUTMAX.
© 2002 Microchip Technology Inc.
DS21350B-page 3