TC1054 Datasheet, PDF (11/18 Pages) TelCom Semiconductor, Inc – 50mA CMOS LDO WITH SHUTDOWN AND ERROR OUTPUT

TC1054/TC1055/TC1186
5.0 TYPICAL CHARACTERISTICS (CONTINUED)
Measure Rise Time of 3.3V LDO
Conditions: C_IN = 1µF, C_OUT = 1µF, I_LOAD = 100mA, V_IN = 4.3V,
Temp = 25°C, Fall Time = 184µS
Measure Fall Time of 3.3V LDO
Conditions: C_IN = 1µF, C_OUT = 1µF, I_LOAD = 100mA, V_IN = 4.3V,
Temp = 25°C, Fall Time = 52µS
VSHDN
VSHDN
VOUT
VOUT
Measure Rise Time of 5.0V LDO
Conditions: C_IN = 1µF, C_OUT = 1µF, I_LOAD = 100mA, V_IN = 6V,
Temp = 25°C, Fall Time = 192µS
VSHDN
VOUT
Measure Fall Time of 5.0V LDO
Conditions: C_IN = 1µF, C_OUT = 1µF, I_LOAD = 100mA, V_IN = 6V,
Temp = 25°C, Fall Time = 88µS
VSHDN
VOUT
Thermal Shutdown Response of 5.0V LDO
Conditions: V_IN = 6V, C_IN = 0µF, C_OUT = 1µF
VOUT
I_LOAD was increased until temperature of die reached about 160°C, at
which time integrated thermal protection circuitry shuts the regulator
off when die temperature exceeds approximately 160°C. The regulator
remains off until die temperature drops to approximately 150°C.
© 2002 Microchip Technology Inc.
DS21350B-page 11