TC1054 Datasheet, PDF (4/18 Pages) TelCom Semiconductor, Inc – 50mA CMOS LDO WITH SHUTDOWN AND ERROR OUTPUT

TC1054/TC1055/TC1186
TC1054/TC1055/TC1186 ELECTRICAL SPECIFICATIONS (CONTINUED)
Electrical Characteristics: V_IN = V_OUT + 1V, I_L = 100µA, C_L = 3.3µF, SHDN > V_IH, T_A = 25°C, unless otherwise noted. Boldface
type specifications apply for junction temperatures of -40°C to +125°C.
Symbol
Parameter
Min
Typ
Max
Units
Test Conditions
SHDN Input
V_IH
SHDN Input High Threshold
V_IL
SHDN Input Low Threshold
45
—
—
%V_IN V_IN = 2.5V to 6.5V
—
—
15
%V_IN V_IN = 2.5V to 6.5V
ERROR Output
V_INMIN
V_OL
V_TH
V_HYS
Note 1:
2:
3:
4:
5:
6:
7:
8:
Minimum VIN Operating Voltage
1.0
—
—
V
Output Logic Low Voltage
—
—
400
mV 1 mA Flows to ERROR
ERROR Threshold Voltage
ERROR Positive Hysteresis
—
0.95 x V_R
—
—
50
—
V See Figure 3-2
mV Note 7
V_R is the regulator output voltage setting. For example: V_R = 1.8V, 2.5V, 2.7V, 2.85V, 3.0V, 3.3V, 3.6V, 4.0V, 5.0V.
TC V_OUT = (V_OUTMAX – V_OUTMIN)x 10⁶
V_OUT x ∆T
Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range
from 0.1mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal
regulation specification.
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value.
Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or
line regulation effects. Specifications are for a current pulse equal to I_LMAX at V_IN = 6V for T = 10 msec.
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the
thermal resistance from junction-to-air (i.e., T_A, T_J, θ_JA). Exceeding the maximum allowable power dissipation causes the device to initiate
thermal shutdown. Please see Section 4.0 Thermal Considerations for more details.
Hysteresis voltage is referenced by V_R.
The minimum V_IN has to justify the conditions: V_IN ≥ V_R + V_DROPOUT and V_IN ≥ 2.7V for I_L = 0.1mA to I_OUTMAX.
DS21350B-page 4
© 2002 Microchip Technology Inc.