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PIC16F887I-PT Datasheet, PDF (254/338 Pages) Microchip Technology – 28/40/44-Pin Flash-Based, 8-Bit CMOS Microcontrollers
PIC16F882/883/884/886/887
17.4 DC Characteristics: PIC16F882/883/884/886/887-E (Extended)
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C  TA  +125°C for extended
Param
No.
Device Characteristics
Min.
Typ†
Max.
Units
VDD
Conditions
Note
D020E Power-down Base
Current (IPD)(2)
— 0.05
9
A
2.0 WDT, BOR, Comparators, VREF and
— 0.15 11
A
3.0 T1OSC disabled
D021E
D022E
D023E
— 0.35 15
A
—
1
28
A
—
2
30
A
—
3
35
A
—
42
65
A
—
85
127
A
—
32
45
A
—
60
78
A
5.0
2.0 WDT Current(1)
3.0
5.0
3.0 BOR Current(1)
5.0
2.0 Comparator Current(1), both
3.0 comparators enabled
D024E
D025E*
D026E
— 120 160 A
—
30
70
A
—
45
90
A
—
75
120
A
—
39
91
A
—
59
117
A
—
98
156
A
— 3.5
18
A
— 4.0
21
A
5.0
2.0 CVREF Current(1) (high range)
3.0
5.0
2.0 CVREF Current(1) (low range)
3.0
5.0
2.0 T1OSC Current(1), 32.768 kHz
3.0
D027E
— 5.0
24
A
5.0
— 0.30 12
A
3.0 A/D Current(1), no conversion in
— 0.36 16
A
5.0 progress
D028E
—
90 130 A
3.0 VP6 Reference Current
— 125 170 A
5.0
* These parameters are characterized but not tested.
† Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Note 1: The peripheral current is the sum of the base IDD or IPD and the additional current consumed when this
peripheral is enabled. The peripheral  current can be determined by subtracting the base IDD or IPD
current from this limit. Max values should be used when calculating total current consumption.
2: The power-down current in Sleep mode does not depend on the oscillator type. Power-down current is
measured with the part in Sleep mode, with all I/O pins in high-impedance state and tied to VDD.
DS41291G-page 254
 2006-2012 Microchip Technology Inc.