PIC16F882-I Datasheet, PDF (252/328 Pages) Microchip Technology – 28/40/44-Pin, Enhanced Flash-Based 8-Bit CMOS Microcontrollers

PIC16F882/883/884/886/887
17.4 DC Characteristics: PIC16F883/884/886/887-E (Extended)
DC CHARACTERISTICS
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C ≤ TA ≤ +125°C for extended
Param
No.
Device Characteristics
Min.
Typ†
Max.
Units
VDD
Conditions
Note
D020E Power-down Base
Current (IPD)⁽²⁾
— 0.05
9
μA
2.0 WDT, BOR, Comparators, VREF and
— 0.15 11
μA
3.0 ^{T1OSC disabled}
D021E
D022E
D023E
— 0.35 15
μA
—
1
28
μA
—
2
30
μA
—
3
35
μA
—
42
65
μA
—
85
127
μA
—
32
45
μA
—
60
78
μA
5.0
2.0 WDT Current⁽¹⁾
3.0
5.0
3.0 BOR Current⁽¹⁾
5.0
2.0 Comparator Current⁽¹⁾, both
3.0 ^{comparators enabled}
D024E
D025E*
D026E
— 120 160 μA
—
30
70
μA
—
45
90
μA
—
75
120
μA
—
39
91
μA
—
59
117
μA
—
98
156
μA
— 3.5
18
μA
— 4.0
21
μA
5.0
2.0 CVREF Current⁽¹⁾ (high range)
3.0
5.0
2.0 CVREF Current⁽¹⁾ (low range)
3.0
5.0
2.0 T1OSC Current⁽¹⁾, 32.768 kHz
3.0
D027E
D028E
— 5.0
24
μA
— 0.30 12
μA
— 0.36 16
μA
—
90
130
μA
— 125 170 μA
5.0
3.0 A/D Current⁽¹⁾, no conversion in
5.0 ^progress
3.0 VP6 Reference Current
5.0
* These parameters are characterized but not tested.
† Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
only and are not tested.
Note 1: The peripheral current is the sum of the base IDD or IPD and the additional current consumed when this
peripheral is enabled. The peripheral Δ current can be determined by subtracting the base IDD or IPD
current from this limit. Max values should be used when calculating total current consumption.
2: The power-down current in Sleep mode does not depend on the oscillator type. Power-down current is
measured with the part in Sleep mode, with all I/O pins in high-impedance state and tied to VDD.
DS41291F-page 250
© 2009 Microchip Technology Inc.