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| MIC4102_11 Datasheet, PDF (3/17 Pages) MIC GROUP RECTIFIERS – 100V Half Bridge MOSFET Driver with Anti-Shoot Through Protection PRELIMINARY SPECIFICATIONS | |||
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Micrel, Inc.
MIC4102
Absolute Maximum Ratings(1)
Supply Voltage (VDD, VHB â VHS) ...................... -0.3V to 18V
Input Voltages (VPWM, VLS) ..................... -0.3V to VDD + 0.3V
Voltage on LO (VLO) .............................. -0.3V to VDD + 0.3V
Voltage on HO (VHO) ......................VHS - 0.3V to VHB + 0.3V
Voltage on HS (continuous) .............................. -1V to 110V
Voltage on HB ..............................................................118V
Average Current in VDD to HB Diode.......................100mA
Junction Temperature (TJ) ........................â55°C to +150°C
Storage Temperature (Ts) ..........................-60°C to +150°C
EDS Rating(3)..............................................................Note 3
Operating Ratings(2)
Supply Voltage (VDD)........................................ +9V to +16V
Voltage on HS ................................................... -1V to 100V
Voltage on HS (repetitive transient) .................. -5V to 105V
HS Slew Rate............................................................ 50V/ns
Voltage on HB ...................................VHS + 8V to VHS + 16V
and............................................ VDD - 1V to VDD + 100V
Junction Temperature (TJ) ........................ â40°C to +125°C
Junction Thermal Resistance
SOIC-8L (θJA)...................................................140°C/W
Electrical Characteristics(4)
VDD = VHB = 12V; VSS = VHS = 0V; No load on LO or HO; TA = 25°C; unless noted. Bold values indicate â40°C< TJ < +125°C.
Symbol
Parameter
Condition
Min
Typ
Max Units
Supply Current
IDD
VDD Quiescent Current
PWM = 0V
150
450
600
µA
IDDO VDD Operating Current
f = 500kHz
3
3.5
4.0
mA
IHB
Total HB Quiescent Current
PWM = 0V
25
150
200
µA
IHBO Total HB Operating Current
f = 500kHz
1.5
2.5
3
mA
IHBS HB to VSS Current, Quiescent VHS = VHB = 110V
0.05
1
30
µA
Input Pins (TTL)
VIL
Low Level Input Voltage
Threshold
0.8
1.5
V
VIH
High Level Input Voltage
Threshold
1.5
2.2
V
RI
Input Pull-down Resistance
100
200
500
kâ¦
Under Voltage Protection
VDDR
VDDH
VHBR
VDD Rising Threshold
VDD Threshold Hysteresis
HB Rising Threshold
6.5
7.3
8.0
V
0.5
V
6.0
7.0
8.0
V
VHBH HB Threshold Hysteresis
0.4
V
Boost Strap Diode
VDL
Low-Current Forward Voltage
IVDD-HB = 100µA
0.4
0.55
0.70
V
VDH
Low-Current Forward Voltage
IVDD-HB = 100mA
0.7
0.8
1.0
V
RD
Dynamic Resistance
IVDD-HB = 100mA
1.0
1.5
2.0
â¦
November 2006
3
M9999-112806
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