MDU5593S Datasheet, PDF (5/9 Pages) MagnaChip Semiconductor. – Dual Asymmetric N-channel Trench MOSFET 30V

FET2 Electrical Characteristics (Ta =25^oC)
Characteristics
Static Characteristics
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain Cut-Off Current
Gate Leakage Current
Symbol
BVDSS
VGS(th)
IDSS
IGSS
Drain-Source ON Resistance
RDS(ON)
Forward Transconductance
Dynamic Characteristics
Total Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Resistance
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
gfs
Qg(10V)
Qg(4.5V)
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Rg
VSD
trr
Qrr
Test Condition
ID = 1mA, VGS = 0V
VDS = VGS, ID = 250μA
VDS = 24V, VGS = 0V
VGS = ±20V, VDS = 0V
VGS = 10V, ID = 27A
VGS = 4.5V, ID = 21A
VDS = 5V, ID = 21A
VDS = 15.0V, ID = 20A,
VGS = 10V
VDS = 15.0V, VGS = 0V,
f = 1.0MHz
VDD=15V, ID=20A, Rg=6Ω
f=1 MHz
IS = 1.0A, VGS = 0V
IF = 27A, dl/dt = 150A/μs
Min
Typ
30
-
1.3
1.8
-
-
-
-
-
2.8
-
4.0
-
46
-
26.1
-
12.6
-
4.5
-
4.2
-
1785
-
652
-
98
-
11.9
-
8.9
-
45.5
-
14.5
-
1.0
-
0.4
-
33.2
-
28.5
Note :
1. Surface mounted FR-4 board by JEDEC (jesd51-7). Continuous current at TC=25℃ is silicon limited.
2. EAS is tested at starting Tj = 25℃, L = 0.5mH, IAS = 15.5A, VDD = 27V, VGS = 10V. And 100% UIL Test at L = 0.1mH, IAS = 18.0A.
Max
-
3.0
500
±0.1
3.3
5.0
-
-
-
-
-
-
-
-
-
-
-
-
-
0.7
-
-
Unit
V
μA
mΩ
S
nC
pF
ns
Ω
V
ns
nC
Jun. 2013 Ver1.2
5
MagnaChip Semiconductor Ltd.