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| MDU5593S Datasheet, PDF (4/9 Pages) MagnaChip Semiconductor. – Dual Asymmetric N-channel Trench MOSFET 30V | |||
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10
â» Note : ID = 10A
8
6
4
2
0
0
5
10
15
20
QG, Total Gate Charge [nC]
Fig.7 Gate Charge Characteristics
102
101
Operation in This Area
is Limited by R
DS(on)
100
10 ms
100 ms
1s
10 s
DC
Single Pulse
T =Max Rated
J
TA=25â
10-1
10-1
100
101
102
VDS, Drain-Source Voltage [V]
Fig.9 Maximum Safe Operating Area
101
D=0.5
100 0.2
0.1
0.05
10-1 0.02
0.01
10-2
single pulse
â» Notes :
Duty Factor, D=t1/t2
PEAK TJ = PDM * Zθ JA* Rθ JA(t) + TA
10-3
10-4
10-3
10-2
10-1
100
101
102
103
t1, Rectangular Pulse Duration [sec]
Fig.11 Transient Thermal Response Curve
1600
Ciss
1200
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
800
Coss
400
Crss
â» Notes ;
1. VGS = 0 V
2. f = 1 MHz
0
0
10
20
30
VDS, Drain-Source Voltage [V]
Fig.8 Capacitance Characteristics
60
50
40
Limited by Package
30
20
10
0
25
50
75
100
125
150
TC, Case Temperature [â ]
Fig.10 Maximum Drain Current vs. Case
Temperature
Jun. 2013 Ver1.2
4
MagnaChip Semiconductor Ltd.
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