MDU5593S Datasheet, PDF (3/9 Pages) MagnaChip Semiconductor. – Dual Asymmetric N-channel Trench MOSFET 30V

50
V = 10V
GS
8.0V
40
5.0V
30
20
4.5V
4.0V
3.5V
10
3.0V
0
0.0
0.2
0.4
0.6
0.8
1.0
V_DS, Drain-Source Voltage [V]
Fig.1 On-Region Characteristics
1.8
※ Notes :
1.6
1. V_GS = 10 V
2. I_D = 13 A
1.4
1.2
1.0
0.8
0.6
-50
-25
0
25
50
75
100
125
150
T_J, Junction Temperature [^oC]
Fig.3 On-Resistance Variation with
Temperature
Area
25
※ Notes :
V_DS = 5V
20
15
T_J=25℃
10
5
0
1
2
3
4
5
V_GS, Gate-Source Voltage [V]
Fig.5 Transfer Characteristics
9
8
V_GS = 4.5V
7
6
V_GS = 10V
5
4
10
20
30
40
50
I_D, Drain Current [A]
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
20
※ Notes :
I_D = 13A
16
12
T_J = 25℃
8
4
3
4
5
6
7
8
9
10
V_GS, Gate to Source Volatge [V]
Fig.4 On-Resistance Variation with
Gate to Source Voltage
※ Notes :
V = 0V
GS
10¹
T_J=25℃
10⁰
10^-1
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
V_SD, Source-Drain voltage [V]
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
Jun. 2013 Ver1.2
3
MagnaChip Semiconductor Ltd.