MDU5593S Datasheet, PDF (2/9 Pages) MagnaChip Semiconductor. – Dual Asymmetric N-channel Trench MOSFET 30V

Ordering Information
Part Number
MDU5593SVRH
Temp. Range
-55~150^oC
Package
Dual PDFN56
Packing
Tape & Reel
RoHS Status
Halogen Free
FET1 Electrical Characteristics (Ta =25^oC)
Characteristics
Static Characteristics
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain Cut-Off Current
Gate Leakage Current
Drain-Source ON Resistance
Forward Transconductance
Total Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Resistance
Source-Drain Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol
Test Condition
BVDSS
ID = 1mA, VGS = 0V
VGS(th)
VDS = VGS, ID = 250μA
IDSS
VDS = 24V, VGS = 0V
IGSS
VGS = ±20V, VDS = 0V
RDS(ON)
VGS = 10V, ID = 13A
VGS = 4.5V, ID = 11A
gfs
VDS = 5V, ID = 13A
Dynamic Characteristics
Qg(10V)
Qg(4.5V)
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Rg
VDS = 15.0V, ID = 10A,
VGS = 10V
VDS = 15.0V, VGS = 0V,
f = 1.0MHz
VDD=15V, ID=10A, Rg=3Ω
f=1 MHz
Drain-Source Body Diode Characteristics
VSD
IS = 1A, VGS = 0V
trr
IF = 10A, dl/dt = 100A/μs
Qrr
Min
Typ
30
-
1.0
1.8
-
-
-
-
-
5.1
-
7.2
-
35
-
18.0
-
9.5
-
3.2
-
3.2
-
1,142
-
446
-
83
-
9.9
-
12.1
-
28.5
-
6.9
-
1.0
-
0.7
-
31.8
-
29.4
Note :
1. Surface mounted FR-4 board by JEDEC (jesd51-7). Continuous current at TC=25℃ is silicon limited.
2. EAS is tested at starting Tj = 25℃, L = 0.5mH, IAS = 15.5A, VDD = 27V, VGS = 10V. And 100% UIL Test at L = 0.1mH, IAS = 18.0A.
Max
-
3.0
1
±0.1
8.0
11.0
-
-
-
-
-
-
-
-
-
-
-
-
-
1.0
-
-
Unit
V
μA
mΩ
S
nC
pF
ns
Ω
V
ns
nC
Jun. 2013 Ver1.2
2
MagnaChip Semiconductor Ltd.