MDU5593S Datasheet, PDF (1/9 Pages) MagnaChip Semiconductor. – Dual Asymmetric N-channel Trench MOSFET 30V

MDU5593S
Dual Asymmetric N-channel Trench MOSFET 30V
General Description
The MDU5593S uses advanced MagnaChip’s MOSFET
Technology, which provides high performance in on-state
resistance, fast switching performance and excellent
quality. MDU5593S is suitable for DC/DC converter and
general purpose applications.
Features
FET1
FET2
 VDS = 30V
 ID = 34A
VDS = 30V
ID = 40A @VGS = 10V

RDS(ON)
< 8.0mΩ
< 3.3mΩ @VGS = 10V
< 11.0mΩ
< 5.0mΩ @VGS = 4.5V
 100% UIL Tested
 100% Rg Tested
5
S1/D2
S2
6
S2
S2
7
G2
8
1
2
3
4
D1 ³
D1
2
D1
1
G1
Absolute Maximum Ratings (Ta = 25^oC)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current ⁽¹⁾
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy ⁽²⁾
TC=25^oC (Silicon Limited)
TC=25^oC (Package Limited)
TA=25^oC
TC=25^oC
TA=25^oC
Junction and Storage Temperature Range
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
TJ, Tstg
FET1
FET2
30
±20
±20
52
95
34
40
13
21
40
100
35.7
44.6
2.2
2.5
60
60
-55~150
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient ⁽¹⁾
Thermal Resistance, Junction-to-Case
Symbol
RθJA
RθJC
FET1
57
3.5
FET2
50
2.8
Unit
V
V
A
A
W
mJ
o_C
Unit
o_C/W
Jun. 2013 Ver1.2
1
MagnaChip Semiconductor Ltd.