71M6521DE Datasheet, PDF (39/107 Pages) Teridian Semiconductor Corporation – Energy Meter IC

71M6521DE/DH/FE Data Sheet
Physical Memory
Flash Memory: The 71M6521DE/DH/FE includes 16KB (71M6521DE/DH) or 32KB (71M6521FE) of on-chip flash
memory. The flash memory primarily contains MPU and CE program code. It also contains images of the CE DRAM,
MPU RAM, and I/O RAM. On power-up, before enabling the CE, the MPU copies these images to their respective
locations.
Allocated flash space for the CE program cannot exceed 1024 words (2KB). The CE program must begin on a 1KB
boundary of the flash address. The CE_LCTN[4:0] word defines which 1KB boundary contains the CE code. Thus,
the first CE instruction is located at 1024*CE_LCTN[4:0]. CE_LCTN must be defined before the CE is enabled.
The flash memory is segmented into 512 byte individually erasable pages.
The CE engine cannot access its program memory when flash write occurs. Thus, the flash write procedure is to
begin a sequence of flash writes when CE_BUSY falls (CE_BUSY interrupt) and to make sure there is sufficient time
to complete the sequence before CE_BUSY rises again. The actual time for the flash write operation will depend on
the exact number of cycles required by the CE program. Typically (CE program is 512 instructions, mux frame is 13
CK32 cycles), there will be 200µs of flash write time, enough for 4 bytes of flash write. If the CE code is shorter, there
will be even more time.
Two interrupts warn of collisions between the MPU firmware and the CE timing. If a flash write is attempted while the
CE is busy, the flash write will not execute and the FW_COL0 interrupt will be issued. If a flash write is still in
progress when the CE would otherwise begin a code pass, the code pass is skipped, the write is completed, and the
FW_COL1 interrupt is issued.
The bit FLASH66Z (see I/O RAM table) defines the speed for accessing flash memory. To minimize supply current
draw, this bit should be set to 1.
Flash erasure is initiated by writing a specific data pattern to specific SFR registers in the proper sequence. These
special pattern/sequence requirements prevent inadvertent erasure of the flash memory.
The mass erase sequence is:
1. Write 1 to the FLSH_MEEN bit (SFR address 0xB2[1].
2. Write pattern 0xAA to FLSH_ERASE (SFR address 0x94)
The mass erase cycle can only be initiated when the ICE port is enabled.
The page erase sequence is:
1. Write the page address to FLSH_PGADR (SFR address 0xB7[7:1]
2. Write pattern 0x55 to FLSH_ERASE (SFR address 0x94)
The MPU may write to the flash memory. This is one of the non-volatile storage options available to the user in
addition to external EEPROM.
FLSH_PWE (flash program write enable) differentiates 80515 data store instructions (MOVX@DPTR,A) between flash
and XRAM writes.
Updating individual bytes in flash memory:
The original state of a flash byte is 0xFF (all ones). Once, a value other than 0xFF is written to a flash memory cell,
overwriting with a different value usually requires that the cell is erased first. Since cells cannot be erased individually,
the page has to be copied to RAM, followed by a page erase. After this, the page can be updated in RAM and then
written back to the flash memory.
MPU RAM: The 71M6521DE/DH/FE includes 2k-bytes of static RAM memory on-chip (XRAM) plus 256-bytes of
internal RAM in the MPU core. The 2K-bytes of static RAM are used for data storage during normal MPU operations.
CE DRAM: The CE DRAM is the working data memory of the CE (128 32-bit words). The MPU can read and write
the CE DRAM as the primary means of data communication between the two processors.
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