MAX15096 Datasheet, PDF (11/15 Pages) Maxim Integrated Products – Integrated Hot-Swap/Electronic

MAX15096/MAX15096A/
MAX15096D
2.7V to 18V, 6A Integrated Hot-Swap/
Electronic Circuit Breaker
An internal 52ms (typ) timer starts counting when the
device enters startup phase. The devices complete
startup phase and enter normal operation mode if the volt-
age at OUT rises above the preload threshold (0.9 x V_IN)
and (V_GATE - V_OUT) > 3V. An open-drain power-good
output (PG) goes high impedance 16ms after the startup
successfully completes. The thermal-protection circuit is
always active and the internal MOSFET is immediately
turned off so thermal-shutdown threshold condition can
be reached.
If the startup is not successful because the output is
shorted or the load is too high (OUT voltage < 1V), the
devices turn off the hot-swap switch after the output short
detection at startup t_SHORT (13.2ms) elapses.
VariableSpeed/BiLevel-Fault Protection
VariableSpeed/BiLevel-fault protection incorporates com-
parators with different thresholds and response times to
monitor the load current (Figure 3). Protection is provided
in normal operation (after the startup period has expired)
by discharging the MOSFET gate in response to a fault
condition. During a fault condition, the MAX15096A enters
an autoretry mode while the MAX15096 latches off (see
the Autoretry and Latchoff Fault Management section).
Enable Input (EN)
The devices allow for enabling the MOSFET in an active-
high configuration. When all other enabling conditions
are verified and the EN pin is at a logic-high level, the
MOSFET is enabled. Similarly, when the EN pin is at a
logic-low level, the MOSFET is disabled.
Charge Pump
An integrated charge pump provides the gate-drive volt-
age for the internal power MOSFET. The charge pump
generates the proper gate-drive voltage above V_IN to fully
enhance the internal power MOSFET and guarantee low
R_ON operation during normal state condition.
During startup, the internal charge pump drives the GATE
of the MOSFET with a 5.9μA current to enhance the
internal MOSFET with 10V/ms slew rate. Connect an
external capacitor (C_GATE) from GATE to GND to reduce
the output slew rate during startup. C_GATE can be
calculated according to the formula below:
C_GATE = (I_GATE x Δt)/ΔV_GATE
where I_GATE is 5.9μA (typ), Δt is the desired slew rate
time, and the 5V of ΔV_GATE is the voltage at the gate of
the internal MOSFET at turn-on.
2.7ms
SLOW
COMPARATOR
200ns
0.6%
OVERCURRENT
Figure 3. VariableSpeed/BiLevel Response
FAST
COMPARATOR
30%
50%
OVERCURRENT OVERCURRENT
OUT CURRENT
www.maximintegrated.com
Maxim Integrated │  11