NPT1015B Datasheet, PDF (7/12 Pages) M/A-COM Technology Solutions, Inc. – GaN Wideband Transistor 28 V, 45 W DC - 3.5 GHz

NPT1015B
GaN Wideband Transistor 28 V, 45 W
DC - 3.5 GHz
Rev. V2
Typical performance as measured in the 2.5 GHz evaluation board:
CW, V_DS = 28 V, I_DQ = 400 mA (unless noted)
Gain vs. Output Power over Temperature
15
14
13
12
+25°C
11
-40°C
+85°C
10
25
30
35
40
45
50
P_OUT (dBm)
Drain Efficiency vs. Output Power over Temperature
60
+25°C
50
-40°C
+85°C
40
30
20
10
0
25
30
35
40
45
50
P_OUT (dBm)
Quiescent V_GS vs. Temperature
-1.1
200mA
-1.2
400mA
600mA
-1.3
-1.4
-1.5
-1.6
-50
-25
0
25
50
Temperature (^oC)
75
100
7
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