NPT1015B Datasheet, PDF (2/12 Pages) M/A-COM Technology Solutions, Inc. – GaN Wideband Transistor 28 V, 45 W DC - 3.5 GHz

NPT1015B
GaN Wideband Transistor 28 V, 45 W
DC - 3.5 GHz
Rev. V2
RF Electrical Specifications: T_C = 25C, V_DS = 28 V, I_DQ = 400 mA
Parameter
Test Conditions
Symbol Min. Typ. Max. Units
Small Signal Gain
CW, 2.5 GHz
G_SS
-
13.5
-
dB
Saturated Output Power
CW, 2.5 GHz
P_SAT
-
47.3
-
dBm
Drain Efficiency at Saturation
CW, 2.5 GHz
_SAT
-
57
-
%
Power Gain
2.5 GHz, P_OUT = 45 W
G_P
10.5
12
-
dB
Drain Efficiency
2.5 GHz, P_OUT = 45 W

47
54
-
%
Ruggedness: Output Mismatch
All phase angles

VSWR = 15:1, No Device Damage
DC Electrical Characteristics: T_C = 25C
Parameter
Test Conditions
Symbol Min.
Drain-Source Leakage Current
Gate-Source Leakage Current
V_GS = -8 V, V_DS = 100 V
V_GS = -8 V, V_DS = 0 V
I_DLK
-
I_GLK
-
Gate Threshold Voltage
Gate Quiescent Voltage
V_DS = 28 V, I_D = 16 mA
V_DS = 28 V, I_D = 400 mA
V_T
-2.3
V_GSQ
-2.1
On Resistance
Maximum Drain Current
V_DS = 2 V, I_D = 120 mA
R_ON
-
V_DS = 7 V pulsed, pulse width 300 µs I_D,MAX
-
Typ.
-
-
-1.5
-1.2
0.22
9.2
Max. Units
16
mA
8
mA
-0.7
V
-0.5
V
-

-
A
2
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