NPT1015B Datasheet, PDF (1/12 Pages) M/A-COM Technology Solutions, Inc. – GaN Wideband Transistor 28 V, 45 W DC - 3.5 GHz

NPT1015B
GaN Wideband Transistor 28 V, 45 W
DC - 3.5 GHz
Features
 GaN on Si HEMT D-Mode Transistor
 Suitable for linear and saturated applications
 Tunable from DC - 3.5 GHz
 28 V Operation
 12 dB Gain @ 2.5 GHz
 54 % Drain Efficiency @ 2.5 GHz
 100 % RF Tested
 Standard metal ceramic package with bolt down
flange
 RoHS* Compliant
Description
The NPT1015 GaN HEMT is a wideband transistor
optimized for DC - 3.5 GHz operation. This device
supports CW, pulsed, and linear operation with
output power levels to 45 W (46.5 dBm) in an
industry standard metal-ceramic package with bolt
down flange.
The NPT1015 is ideally suited for defense
communications, land mobile radio, avionics,
wireless infrastructure, ISM applications and VHF/
UHF/L/S-band radar.
Built using the SIGANTIC® process - a proprietary
GaN-on-Silicon technology.
Ordering Information
Part Number
NPT1015B
NPT1015B-SMBPPR
Package
bulk quantity
sample
Functional Schematic
Rev. V2
RF_IN / V_G 1
3
Flange
2 RF_OUT / V_D
Pin Configuration
Pin No.
Pin Name
Function
1
RF_IN / V_G
RF Input / Gate
2
RF_OUT / V_D
RF Output / Drain
3
Flange¹
Ground / Source
1. The Flange must be connected to RF and DC ground. This
path must also provide a low thermal resistance heat path.
* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.
1
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