NPT1015B Datasheet, PDF (5/12 Pages) M/A-COM Technology Solutions, Inc. – GaN Wideband Transistor 28 V, 45 W DC - 3.5 GHz

NPT1015B
GaN Wideband Transistor 28 V, 45 W
DC - 3.5 GHz
Evaluation Board and Recommended Tuning Solution
2.5 GHz Narrowband Circuit
Rev. V2
V_GS
C1
1.0 mF
C2
0.1 mF
C3
0.01 mF
C4
1000 pF
R1
15 
RF_IN
C11
2.4 pF
L1
19.4 nH
C12
2.2 pF
C13
10 pF
NPT1015
C9
10 pF
C8
1000pF
C7
0.01 mF
C6
0.1 mF
C5
1.0 mF
V_DS
C10
20 pF
C14
10 pF
C15
0.6 pF
RF_OUT
Description
Parts measured on evaluation board (20-mil thick
RO4350). Matching is provided using a
combination of lumped elements and transmission
lines as shown in the simplified schematic above.
Recommended tuning solution component
placement, transmission lines, and details are
shown on the next page.
Bias Sequencing
Turning the device ON
1. Set V_GS to the pinch-off (V_P), typically -5 V.
2. Turn on V_DS to nominal voltage (28 V).
3. Increase V_GS until the I_DS current is reached.
4. Apply RF power to desired level.
Turning the device OFF
1. Turn the RF power off.
2. Decrease V_GS down to V_P.
3. Decrease V_DS down to 0 V.
4. Turn off V_GS.
5
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