NPT1015B Datasheet, PDF (4/12 Pages) M/A-COM Technology Solutions, Inc. – GaN Wideband Transistor 28 V, 45 W DC - 3.5 GHz

NPT1015B
GaN Wideband Transistor 28 V, 45 W
DC - 3.5 GHz
Rev. V2
Load-Pull Performance: V_DS = 28 V, I_DQ = 400 mA, T_C = 25°C
Reference Plane at Device Leads, CW Drain Efficiency and Output Power Tradeoff Impedance
Frequency
(MHz)
900
Z_S
()
1.1 + j0.7
Z_L
()
6.3 + j1.8
P_SAT
(W)
53.7
G_SS
(dB)
22.5
Drain Efficiency
@ P_SAT (%)
65.1
2200
1.6 - j6.0
5.4 - j0.6
53.2
15.8
64.8
2500
1.5 - j6.7
5.2 - j2.2
50.9
15.0
60.8
3500
2.6 - j15
3.9 - j6.3
42.0
13.9
55.4
Impedance Reference
Z_S and Z_L vs. Frequency
Z_S
Z_L
Gain vs. Output Power
24
22
900MHz
20
2200MHz
2500MHz
3500MHz
18
Drain Efficiency vs. Output Power
70
900MHz
60
2200MHz
2500MHz
3500MHz
50
40
16
30
14
20
12
10
10
25
30
35
40
45
50
4
P_OUT (dBm)
0
25
30
35
40
45
50
P_OUT (dBm)
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