LMBT5087LT1G_11 Datasheet, PDF (6/7 Pages) Leshan Radio Company – Low Noise Transistor PNP Silicon RoHS requirements.

LESHAN RADIO COMPANY, LTD.
LMBT5087LT1G
10⁴
V _CC = 30 V
10³
10²
I _CEO
10¹
I _CBO
AND
10⁰
I @ V = 3.0 V
CEX
BE(off)
10^–1
10^–2
–4 –2
0 +20 +40 +60 +80 +100 +120 +140 +160
T _J , JUNCTION TEMPERATURE (°C)
Figure 15. Typical Collector Leakage Current
DESIGN NOTE: USE OF THERMAL RESPONSE DATA
A train of periodical power pulses can be represented by
the model as shown in Figure 16. Using the model and the
device thermal response the normalized effective transient
thermal resistance of Figure 14 was calculated for various
duty cycles.
To find Z _θJA(t) , multiply the value obtained from Figure 14 by
the steady state value R _θJA .
Example:
Dissipating 2.0 watts peak under the following conditions:
t ₁ = 1.0 ms, t ₂ = 5.0 ms. (D = 0.2)
Using Figure 16 at a pulse width of 1.0 ms and D = 0.2, the
reading of r(t) is 0.22.
The peak rise in junction temperature is therefore
∆T = r(t) x P _(pk) x R _θJA = 0.22 x 2.0 x 200 = 88°C.
For more information, see AN–569.
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