LMBT5087LT1G_11 Datasheet, PDF (2/7 Pages) Leshan Radio Company – Low Noise Transistor PNP Silicon RoHS requirements.

LESHAN RADIO COMPANY, LTD.
LMBT5087LT1G
ELECTRICAL CHARACTERISTICS (T _A = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
ON CHARACTERISTICS
DC Current Gain
(I C = –100µAdc, V CE = –5.0 Vdc)
(I C = –1.0 mAdc, V CE = –5.0 Vdc)
(I C = –10 mAdc, V CE = –5.0 Vdc)
Collector–Emitter Saturation Voltage
(I C = –10 mAdc, I B = –1.0 mAdc)
h FE
V CE(sat)
250
250
250
––
Base–Emitter Saturation Voltage
(I C = –10 mAdc, I B = –1.0 mAdc)
V BE(sat)
––
Max
800
––
––
– 0.3
– 0.85
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(I C = –500 µAdc, V CE= –5.0 Vdc, f = 20 MHz)
Output Capacitance
(V CB= –5.0 Vdc, I E = 0, f = 1.0 MHz)
Small–Signal Current Gain
(I C= –1.0mAdc, V CE = –5.0Vdc, f = 1.0 kHz)
Noise Figure
fT
40
—
C obo
—
4.0
h fe
250
900
NF
(I C = –20 mAdc, V CE= –5.0 Vdc,R_s=10kΩ, f = 1.0 kHz)
—
2.0
(I C = –100µAdc, V CE= –5.0 Vdc,R_s=3.0kΩ, f = 1.0 kHz)
—
2.0
Unit
––
Vdc
Vdc
MHz
pF
—
dB
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