LMBT5087LT1G_11 Datasheet, PDF (3/7 Pages) Leshan Radio Company – Low Noise Transistor PNP Silicon RoHS requirements.

LESHAN RADIO COMPANY, LTD.
LMBT5087LT1G
10
7.0
5.0
3.0
2.0 ^1.0mA
1.0
10 20
TYPICAL NOISE CHARACTERISTICS
(V _CE = – 5.0 Vdc, T _A = 25°C)
10.0
BANDWIDTH = 1.0 Hz
7.0
R _S^~ ~ 0
5.0
I_C=10 µA
3.0
2.0
30µA
1.0
100µA
0.7
300µA
0.5
0.3
0.2
I_C=1.0mA
BANDWIDTH = 1.0 Hz
R _S ~ _~
300µA
100µA
30µA
10µA
50 100 200
500 1.0k 2.0k
5.0k 10k
0.1
10 20
50 100 200 500 1.0k 2.0k 5.0k 10k
f, FREQUENCY (Hz)
Figure 1. Noise Voltage
f, FREQUENCY (Hz)
Figure 2. Noise Current
NOISE FIGURE CONTOURS
(V _CE = – 5.0 Vdc, T _A = 25°C)
1.0M
500k
200k
100k
50k
20k
10k
5.0k
2.0k
1.0k
500
200
100
10
BANDWIDTH = 1.0 Hz
0.5 dB
1.0 dB
2.0dB
3.0dB
5.0dB
20 30
50 70 100
200 300 500 700 1.0K
I _C , COLLECTOR CURRENT (µA)
Figure 3. Narrow Band, 100 Hz
1.0M
500k
200k
100k
50k
20k
10k
5.0k
2.0k
1.0k
500
200
100
10
BANDWIDTH = 1.0 Hz
0.5dB
1.0dB
2.0 dB
3.0dB
5.0 dB
20 30 50 70 100
200 300 500 700 1.0K
I _C , COLLECTOR CURRENT (µA)
Figure 4. Narrow Band, 1.0 kHz
1.0M
500k
200k
100k
50k
20k
10k
5.0k
2.0k
1.0k
500
200
100
10
10 Hz to 15.7kHz
0.5dB
1.0dB
2.0dB
3.0 dB
5.0 dB
20 30
50 70 100
200 300 500 700 1.0K
I _C , COLLECTOR CURRENT (µA)
Figure 5. Wideband
Noise Figure is Defined as:
NF = 20 log 10 ( ––e–n–2–+–4–K4–KTT–RRS–+–I–n–2 R––S2)1/ 2
S
e _n = Noise Voltage of the Transistor referred to the input. (Figure 3)
I = Noise Current of the Transistor referred to the input. (Figure 4)
n
K = Boltzman’s Constant (1.38 x 10 ^–23 j/°K)
T = Temperature of the Source Resistance (°K)
R _s = Source Resistance ( Ω )
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