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LMBT5087LT1G_11 Datasheet, PDF (5/7 Pages) Leshan Radio Company – Low Noise Transistor PNP Silicon RoHS requirements.
LESHAN RADIO COMPANY, LTD.
TYPICAL DYNAMIC CHARACTERISTICS
LMBT5087LT1G
500
300
200
100
70
50
30
20
10
7.0
5.0
1.0
V CC= 3.0 V
IC /I B= 10
T J= 25°C
tr
td @ V = BE(off) 0.5 V
2.0 3.0 5.0 7.0 10
20 30
50 70 100
I C , COLLECTOR CURRENT (mA)
Figure 10. Turn–On Time
1000
700
500
300
200
100
70
50
30
20
10
–1.0
VCC= –3.0 V
IC /I B= 10
ts
IB1=IB2
T J= 25°C
tf
–2.0 –3.0 –5.0 –7.0 –10
–20 –30 –50 –70 –100
I C , COLLECTOR CURRENT (mA)
Figure 11. Turn–Off Time
500
T J = 25°C
300
V CE=20 V
5.0 V
200
10.0
T J= 25°C
7.0
C ib
5.0
3.0
100
2.0
C ob
70
50
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20 30
50
I C , COLLECTOR CURRENT (mA)
Figure 12. Current–Gain — Bandwidth Product
1.0
0.05 0.1 0.2
0.5 1.0 2.0
5.0 10 20
50
V R , REVERSE VOLTAGE (VOLTS)
Figure 13. Capacitance
1.0
0.7
0.5
D = 0.5
0.3
0.2
0.1
0.07
0.05
0.03
0.02
0.01
0.01
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
FIGURE 16
P(pk)
t1
t2
DUTY CYCLE, D = t 1 / t 2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t 1 (SEE AN–569)
Z θJA(t) = r(t) • RθJA
T
J(pk)
–
T
A
=
P
Z
(pk)
θJA(t)
0.02 0.05 0.1 0.2
0.5 1.0 2.0
5.0 10 20
50 100 200 500 1.0k 2.0k
t, TIME (ms)
Figure 14. Thermal Response
5.0k 10k 20k
50k 100k
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