LMBT5087LT1G_11 Datasheet, PDF (1/7 Pages) Leshan Radio Company – Low Noise Transistor PNP Silicon RoHS requirements.

LESHAN RADIO COMPANY, LTD.
Low Noise Transistor
PNP Silicon
• We declare that the material of product compliance with RoHS requirements.
LMBT5087LT1G
ORDERING INFORMATION
Device
Marking
Shipping
LMBT5087LT1G
2Q
3000/Tape & Reel
LMBT5087LT3G
2Q
10000/Tape & Reel
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
DEVICE MARKING
Symbol
V CEO
V CBO
V EBO
IC
LMBT5087LT1G =2Q
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation RF-5 Board (1)
T A =25 °C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T A = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Value
– 50
– 50
– 3.0
– 50
Unit
Vdc
Vdc
Vdc
mAdc
Symbol
PD
R θJA
PD
R θJA
T J , T stg
Max
225
1.8
556
300
2.4
417
–55 to +150
3
1
2
SOT– 23 (TO–236AB)
1
BASE
3
COLLECTOR
2
EMITTER
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I C = –1.0 mAdc, I B = 0)
Collector–Base Breakdown Voltage
(I C = –100 µAdc, I E = 0)
V (BR)CEO
V (BR)CBO
Collector Cutoff Current
I CBO
(V CB = –10 Vdc, I E= 0)
(V CB = –35 Vdc, I E= 0)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
Min
– 50
– 50
—
—
Max
—
—
–10
–50
Unit
Vdc
Vdc
n Adc
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