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LTC3350_15 Datasheet, PDF (7/46 Pages) Linear Technology – High Current Supercapacitor Backup Controller and System Monitor
LTC3350
Electrical Characteristics The l denotes the specifications which apply over the specified operating
junction temperature range, otherwise specifications are at TA = 25°C (Note 2). VIN = VOUT = 12V, VDRVCC = VINTVCC unless otherwise
noted.
SYMBOL
tSU,STO
tHD,DATO
tHD,DATI
tSU,DAT
tSP
VSMBALERT
ISMBALERT
PARAMETER
Stop Condition Set-Up Time
Output Data Hold Time
Input Data Hold Time
Data Set-Up Time
Input Spike Suppression Pulse Width
SMBALERT Output Low Voltage
SMBALERT High-Z Leakage Current
CONDITIONS
ISINK = 1mA
VSMBALERT = 5V
MIN TYP MAX
0.6
0
900
0
100
50
200
l
1
UNITS
µs
ns
ns
ns
ns
mV
μA
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: The LTC3350 is tested under pulsed load conditions such that
TJ ≈ TA. The LTC3350E is guaranteed to meet specifications from
0°C to 125°C junction temperature. Specifications over the –40°C to
125°C operating junction temperature range are assured by design,
characterization and correlation with statistical process controls. The
LTC3350I is guaranteed over the –40°C to 125°C operating junction
temperature range. Note that the maximum ambient temperature
consistent with these specifications is determined by specific operating
conditions in conjunction with board layout, the rated package thermal
impedance and other environmental factors. The junction temperature
(TJ, in °C) is calculated from the ambient temperature (TA, in °C) and
power dissipation (PD, in Watts) according to the formula:
TJ = TA + (PD • θJA)
where θJA = 34°C/W for the UHF package.
Note 3: The LTC3350 includes overtemperature protection that is intended
to protect the device during momentary overload conditions. Junction
temperature will exceed 125˚C when overtemperature protection is active.
Continuous operation above the specified maximum operating junction
temperature may impair device reliability.
Note 4: Dynamic supply current is higher due to the gate charge being
delivered at the switching frequency. See the Applications Information
section.
Note 5: Measurement error is the magnitude of the difference between the
actual measured value and the ideal value. VSNSI is the voltage between
VOUTSP and VOUTSN, representing input current. VSNSC is the voltage
between ICAP and VCAP, representing charge current. Error for VSNSI and
VSNSC is expressed in μV, a conversion to an equivalent current may be
made by dividing by the sense resistors, RSNSI and RSNSC, respectively.
Typical Performance Characteristics
TA = 25°C, Application Circuit 4 unless otherwise noted.
Supercapacitor Backup Operation
VOUT
2V/DIV
VCAP
2V/DIV
VIN
2V/DIV
0V
PBACKUP = 25W
400ms/DIV
BACK PAGE APPLICATION CIRCUIT
3350 G01
HV Electrolytic Backup Operation
PBACKUP = 25W
VCAP
5V/DIV
VOUT
5V/DIV
VIN
5V/DIV
0V
20ms/DIV
APPLICATION CIRCUIT 6
3350 G02
For more information www.linear.com/LTC3350
Shunt Operation Using VCAP2
5
VSHUNT = 2.7V
4
3
ICHARGE
2
1
ICAP2
0
–1
2.64 2.65 2.66 2.67 2.68 2.69 2.70 2.71
VCAP2 (V)
3350 G03
3350fb
7