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LTC3617_15 Datasheet, PDF (3/20 Pages) Linear Technology – 6A Monolithic Synchronous Step-Down Regulator for DDR Termination
LTC3617
Electrical Characteristics The l denotes the specifications which apply over the full operating junction
temperature range, otherwise specifications are at TA = 25°C. PVIN = SVIN = 3.3V, RT = SVIN unless otherwise specified (Notes 1, 2, 8).
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
∆VFB(LINEREG) Feedback Voltage Line Regulation
SVIN = PVIN = 2.25V to 5.5V,
l
VDDQIN = 1.5V (Notes 3, 4)
0.2
%/V
∆VFB(LOADREG) Feedback Voltage Load Regulation
ITH from 0.5V to 0.9V (Notes 3, 4)
VITH = SVIN (Note 5)
0.25
%
0.25
%
IQ
Input DC Supply Current
Active Mode
VFB = 0.6V, VDDQIN = 1.5V (Note 6)
Shutdown
SVIN = PVIN = 5.5V, VRUN = 0V
1100
µA
0.1
1
µA
RDS(ON)
Top Switch On-Resistance
PVIN = 3.3V
35
 
mΩ
Bottom Switch On-Resistance
PVIN = 3.3V
25
mΩ
ILIM
Top Switch Positive Peak Current Limit Sourcing (Note 7), VFB = 0.5V
Top Switch Negative Peak Current Limit Sinking (Note 7)
8
10
14
A
–12
–8
–5
A
gm(EA)
IEAO
Error Amplifier Transconductance
–5µA < IITH < 5µA (Note 4)
Error Amplifier Maximum Output Current (Note 4)
200
µS
±30
µA
tSS
Internal Soft-Start Time
VFB from 0.075V to 0.675V,
VDDQIN = 1.5V
0.4
0.85
2
ms
fOSC
fSYNC
Oscillator Frequency
Internal Oscillator Frequency
Synchronization Frequency Range
RT = 370k
VRT = SVIN
l
0.8
1
1.2
MHz
l
1.8
2.25
2.7
MHz
0.3
4
MHz
VSYNC
SYNC Input Threshold High Voltage
SYNC Input Threshold Low Voltage
1.2
V
0.3
V
ISW(LKG)
Switch Leakage Current
SVIN = PVIN = 5.5V, VRUN = 0V
 
0.1
1
µA
PGOOD
Power Good Voltage Windows
VDDQIN = 1.5V, Entering Window
VFB Ramping Up
–3.5
–5
%
VFB Ramping Down
3.5
5
%
tPGOOD
RPGOOD
Power Good Blanking Time
Power Good Pull-Down On-Resistance
VDDQIN = 1.5V, Leaving Window
VFB Ramping Up
VFB Ramping Down
Entering and Leaving Window
8
10
%
–8
–10
%
70
105
140
µs
8
17
33
Ω
VRUN
RUN voltage
Input High
Input Low
l
1
l
V
0.4
V
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
Note 2: The LTC3617 is tested under pulsed load conditions such that
TJ ≈ TA. The LTC3617E is guaranteed to meet performance specifications
over the 0°C to 85°C operating junction temperature range. Specifications
over the –40°C to 125°C operating junction temperature range are
assured by design, characterization and correlation with statistical process
controls. The LTC3617I is guaranteed to meet specifications over the
full –40°C to 125°C operating junction temperature range. Note that
the maximum ambient temperature is determined by specific operating
conditions in conjunction with board layout, the rated package thermal
resistance and other environmental factors. The junction temperature
(TJ, in °C) is calculated from the ambient temperature (TA, in °C) and
power dissipation (PD, in watts) according to the formula:
TJ = TA + (PD • θJA), where θJA (in °C/W) is the package thermal
impedance.
Note 3: This parameter is tested in a feedback loop which servos VFB to
the midpoint for the error amplifier (VITH = 0.75V).
Note 4: External compensation on ITH pin.
Note 5: Tying the ITH pin to SVIN enables the internal compensation.
Note 6: Dynamic supply current is higher due to the internal gate charge
being delivered at the switching frequency.
Note 7: In sourcing mode the average output current is flowing out of the
SW pin. In sinking mode the average output current is flowing into the SW
Pin.
Note 8: This IC includes overtemperature protection that is intended
to protect the device during momentary overload conditions. Junction
temperature will exceed 125°C when overtemperature protection is active.
Continuous operation above the specified maximum operating junction
temperature may impair device reliability.
3617fa
3