IRF7805Z Datasheet, PDF (6/6 Pages) International Rectifier – HEXFET Power MOSFET

SMD Type
N-Channel Enhancement MOSFET
IRF7805Z (KRF7805Z)
■ Typical Characterisitics
MOSFET
0.03
0.02
0.01
T _J = 125°C
T _J = 25°C
0.00
2.0
4.0
6.0
8.0
10.0
VGS, Gate-to-Source Voltage (V)
Fig 12. On-Resistance Vs. Gate Voltage
300
ID
TOP
6.0A
250
6.9A
BOTTOM 12A
200
150
100
50
0
25
50
75
100
125
150
Starting TJ, Junction Temperature (°C)
Fig 13c. Maximum Avalanche Energy
Vs. Drain Current
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