IRF7805Z Datasheet, PDF (2/6 Pages) International Rectifier – HEXFET Power MOSFET

SMD Type
N-Channel Enhancement MOSFET
IRF7805Z (KRF7805Z)
MOSFET
■ Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate Source Charge
Gate Source Charge
Gate Drain Charge
Gate Charge Overdrive
Switch Charge(Qgd+Qgs2)
Output Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Maximum Body-Diode Continuous Current
Pulsed Source Gurrent
Diode Forward Voltage
Symbol
VDSS
IDSS
IGSS
VGS(th)
RDS(On)
gFS
Ciss
Coss
Crss
Rg
Qg
Qgs1
Qgs2
Qgd
Qgodr
QSW
QOSS
td(on)
tr
td(off)
tf
trr
Qrr
IS
ISM
VSD
Test Conditions
ID=250μA, VGS=0V
VDS=24V, VGS=0V
VDS=24V, VGS=0V, TJ=125℃
VDS=0V, VGS=±20V
VDS=VGS , ID=250μA
VGS=10V, ID=16A
VGS=4.5V, ID=13A
VDS=15V, ID=12A
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
VGS=4.5V, VDS=15V, ID=12A
VGS=0V, VDS=16V
VGS=4.5V, VDS=15V,ID=12A
IF= 12A, dI/dt= 100A/μs,VDD=15V
IS=12A,VGS=0V
Min Typ Max Unit
30
V
1
μA
150
±100 nA
1.35
2.25 V
5.5 6.8
mΩ
7.0 8.7
64
S
2080
480
pF
220
1.0 2.1 Ω
18 27
4.7
1.6
6.2
nC
5.5
7.8
10
11
10
14
ns
3.7
29 44
20 30 nC
3.1
A
120
1
V
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