IRF7805Z Datasheet, PDF (4/6 Pages) International Rectifier – HEXFET Power MOSFET

SMD Type
MOSFET
N-Channel Enhancement MOSFET
■ Typical Characterisitics
IRF7805Z (KRF7805Z)
10000
V _GS = 0V,
f = 1 MHZ
C _iss = Cgs + C _gd, Cds SHORTED
C _rss = Cgd
C _oss = C _ds + C _gd
Ciss
12
ID= 12A
10
8
V _DS = 24V
VDS= 15V
1000
6
Coss
4
Crss
2
100
1
10
100
VDS, Drain-to-Source Voltage (V)
0
0
10
20
30
40
QG Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000.0
100.0
.
T _J = 150°C
10.0
1.0
T _J = 25°C
0.1
0.2
V _GS = 0V
0.4 0.6 0.8 1.0 1.2
VSD, Source-toDrain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
1000
100
OPERATION IN THIS AREA
LIMITED BY R _DS (on)
100µsec
10
1msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1.0
10.0
10msec
100.0
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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