IRF7805Z Datasheet, PDF (5/6 Pages) International Rectifier – HEXFET Power MOSFET

SMD Type
N-Channel Enhancement MOSFET
IRF7805Z (KRF7805Z)
MOSFET
■ Typical Characterisitics
16
2.2
2.0
12
1.8
ID = 250µA
8
1.6
1.4
4
1.2
0
25
50
75
100
125
TJ , Junction Temperature (°C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
1.0
150
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 10. Threshold Voltage Vs. Temperature
100
D = 0.50
10
0.20
0.10
0.05
1
0.02
0.01
0.1
0.01
0.001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
τ_{J τ}
J
τ_{1 τ1}
R _{1R 1}
Ci= τi/Ri
Ci i/Ri
R _{2R 2}
τ_{2 τ2}
R _{3R 3}
R _{4R 4}
Ri (°C/W)
τ_{C τ}
1.081
12.880
τi (sec)
0.000437
0.213428
τ_{3 τ3}
τ_{4 τ4}
24.191
2.335
11.862
52
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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