IRF7805Z Datasheet, PDF (1/6 Pages) International Rectifier – HEXFET Power MOSFET

SMD Type
MOSFET
N-Channel Enhancement MOSFET
IRF7805Z (KRF7805Z)
■ Features
● VDS (V) = 30V
● ID = 16 A (VGS = 10V)
● RDS(ON) ＜ 6.8mΩ (VGS = 10V)
● HEXFET Power MOSFET
S
1
S
2
S
3
G
4
SOP-8
AA
8
D
7
D
6
D
5
D
1.50 0.15
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Avalanche Current
Single Pulse Avalanche Energy
Power Dissipation
Thermal Resistance.Junction- to-Ambient
Thermal Resistance.Junction- to-Case
Junction Temperature
Storage Temperature Range
TA=25℃
TA=70℃
TA=25℃
TA=70℃
Symbol
VDS
VGS
ID
IDM
IAR
EAS
PD
RthJA
RthJC
TJ
Tstg
Rating
30
±20
16
12
120
12
72
2.5
1.6
50
20
150
-55 to 150
Unit
V
A
mJ
W
℃/W
℃
www.kexin.com.cn ¹