SI5504DC Datasheet, PDF (5/7 Pages) Vishay Siliconix – Complementary 30-V (D-S) MOSFET

SMD Type
Complementary power Trench MOSFET
SI5504DC (KI5504DC)
■ Typical Characterisitics
Normalized Thermal Transient Impedance, Junction-to-Foot
2
1
Duty Cycle = 0.5
0.2
0.1
0.1 _0.05
0.02
MOSFET
Single Pulse
0.01
10^{- 4}
10^{- 3}
10^{- 2}
10^{- 1}
1
Square Wave Pulse Duration (sec)
P-MOSFET Characteristic curve
Output Characteristics
10
V_GS = 10 thru 7 V
6V
8
5V
6
Transfer Characteristics
10
T_C = -55 C
8
25 C
6
10
125 C
4
4V
4
2
3V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.4
V_GS = 4.5 V
0.3
0.2
V_GS = 10 V
0.1
0.0
0
2
4
6
8
10
I_D - Drain Current (A)
2
0
0
1
2
3
4
5
6
V_GS - Gate-to-Source Voltage (V)
Capacitance
400
320
C_iss
240
160
C_oss
80
C_rss
0
0
6
12
18
24
30
V_DS - Drain-to-Source Voltage (V)
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