SI5504DC Datasheet, PDF (1/7 Pages) Vishay Siliconix – Complementary 30-V (D-S) MOSFET

SMD Type
Complementary power Trench MOSFET
SI5504DC (KI5504DC)
MOSFET
■ Features
● N-Channel：VDS=30V ID= 3.9A
●
RDS(ON) ＜ 85mΩ (VGS = 10V)
●
RDS(ON) ＜ 143mΩ (VGS = 4.5 V)
● P-Channel：VDS=-30V ID=- 2.8A
●
RDS(ON) ＜ 165mΩ (VGS =-10V)
●
RDS(ON) ＜ 290mΩ (VGS =-4.5V)
D1
S2
1206-8 chipFET (Chip-8)
G2
G1
S1
N-Channel MOSFET
D2
P-Channel MOSFET
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Ta = 25℃
Ta = 85℃
Pulsed Drain Current
Power Dissipation
Ta = 25℃
Ta = 85℃
Thermal Resistance.Junction- to-Ambient (Note.1)
Thermal Resistance.Junction- to-Case
Junction Temperature
Storage Temperature Range
VDS
VGS
ID
IDM
PD
RthJA
RthJC
TJ
Tstg
Note.1: Surface Mounted on 1” x 1” FR4 Board.
N-Channel
P-Channel
Unit
5 Secs Steady State 5 Secs Steady State
30
-30
V
±20
3.9
2.9
- 2.8
- 2.1
2.8
2.1
-2
-1.5
A
±10
2.1
1.1
2.1
1.1
W
1.1
0.6
1.1
0.6
60
110
60
110
℃/W
-
40
-
40
150
℃
-55 to 150
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