SI5504DC Datasheet, PDF (2/7 Pages) Vishay Siliconix – Complementary 30-V (D-S) MOSFET

SMD Type
MOSFET
Complementary power Trench MOSFET
SI5504DC (KI5504DC)
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Test Conditions
Type Min
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
VDSS
IDSS
ID=250μA, VGS=0V
ID=-250μA, VGS=0V
VDS=24V, VGS=0V
VDS=-24V, VGS=0V
VDS=24V, VGS=0V ,TJ = 85℃
VDS=-24V, VGS=0V ,TJ = 85℃
IGSS VDS=0V, VGS=±20V
N-CH 30
P-CH -30
N-CH
P-CH
N-CH
P-CH
N-CH
P-CH
Gate Threshold Voltage
VGS(th)
VDS=VGS , ID=250μA
VDS=VGS, ID=-250μA
N-CH 1
P-CH -1
Static Drain-Source On-Resistance
(Note.1)
VGS=10V, ID=2.9A
VGS=4.5V, ID=2.2A
RDS(On)
VGS=-10V, ID=-2.1A
VGS=-4.5V, ID=-1.6A
N-CH
P-CH
On-State Drain Current (Note.1)
ID(on)
VDS= 5 V, VGS = 10 V
VDS= -5 V, VGS = -10 V
N-CH 10
P-CH -10
Forward Transconductance (Note.1)
VDS=15V, ID=2.9A
gFS
VDS=-15V, ID=-2.1A
N-CH
P-CH
Total Gate Charge
Qg
N-Channel:
N-CH
P-CH
Gate Source Charge
VGS=10V, VDS=15V, ID=2.9A
Qgs
P-Channel:
N-CH
P-CH
Gate Drain Charge
VGS=-10V, VDS=-15V, ID=-2.1A
Qgd
N-CH
P-CH
Turn-On DelayTime
td(on)
N-Channel:
N-CH
P-CH
Turn-On Rise Time
VGS=10V, VDS=15V, ID=1A, RG=6Ω N-CH
tr
RL=15 Ω
P-CH
Turn-Off DelayTime
td(off)
P-Channel:
N-CH
VGS=-10V, VDS=-15V, ID=-1A, RG=6Ω P-CH
Turn-Off Fall Time
RL=15 Ω
tf
N-CH
P-CH
Body Diode Reverse Recovery Time
IF=0.9A, dI/dt=100A/μs
trr
IF=-0.9A, dI/dt=100A/μs
N-CH
P-CH
Maximum Body-Diode Continuous Current IS
N-CH
P-CH
Diode Forward Voltage
IS=0.9A,VGS=0V
VSD
IS=-0.9A,VGS=0V
N-CH
P-CH
Note.1: Pulse test; pulse width ≤ 300 s, duty cycle ≤ 2%,
Typ Max Unit
V
1
-1
μA
5
-5
±100 nA
V
72 85
120 143
mΩ
137 165
240 290
A
6
S
3
5 7.5
5.5 6.6
0.8
nC
1.2
1
0.9
7 11
8 12
12 18
11 18
12 18
ns
14 21
7 11
8 12
40 80
40 80
0.9
A
-0.9
0.8 1.2
-0.8 -1.2 V
■ Marking
Marking
EA**
2 _{www.kexin.com.cn}