SI5504DC Datasheet, PDF (4/7 Pages) Vishay Siliconix – Complementary 30-V (D-S) MOSFET

SMD Type
MOSFET
Complementary power Trench MOSFET
SI5504DC (KI5504DC)
■ Typical Characterisitics
Source-Drain Diode Forward Voltage
10
On-Resistance vs. Gate-to-Source Voltage
0.20
T_J = 150 C
0.15
0.10
I_D = 2.9 A
1
0.00
T_J = 25 C
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
0.05
0.00
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
Threshold Voltage
0.4
0.2
I_D = 250 A
-0.0
-0.2
-0.4
-0.6
-0.8
-50 -25
.
0 25 50 75 100 125 150
T_J - Temperature ( C)
Single Pulse Power
50
40
30
20
10
0
10^{- 4} 10^{- 3}
10^{- 2} 10^{- 1}
1
Time (sec)
10 100 600
2
1
Duty Cycle = 0.5
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.2
0.1
0.1 _0.05
0.02
0.01
10^{- 4}
Single Pulse
10^{- 3}
10^{- 2}
4 _{www.kexin.com.cn}
10^{- 1}
1
Square Wave Pulse Duration (sec)
Notes:
P_DM
t₁
t₂
1. Duty Cycle, D =
t₁
t₂
2. Per Unit Base = R_thJA = 90 C/W
3. T_JM - T_A = P_DMZ_thJA(t)
4. Surface Mounted
10
100
600