English
Language : 

SI5504DC Datasheet, PDF (3/7 Pages) Vishay Siliconix – Complementary 30-V (D-S) MOSFET
SMD Type
MOSFET
Complementary power Trench MOSFET
SI5504DC (KI5504DC)
■ Typical Characterisitics
N-MOSFET Characteristic curve
Output Characteristics
10
Transfer Characteristics
10
VGS = 10 thru 5 V
8
8
6
4V
6
4
2
3V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.20
0.15
0.10
VGS = 4.5 V
0.05
VGS = 10 V
4
TC = -125 C
2
25 C
-55 C
0
0
1
2
3
4
5
VGS - Gate-to-Source Voltage (V)
Capacitance
400
Ciss
300
200
100
Coss
0.00
0
10
2
4
6
8
10
ID - Drain Current (A)
Gate Charge
8
VDS = 15 V
ID = 2.9 A
6
4
2
0
0
1
2
3
4
5
Qg - Total Gate Charge (nC)
Crss
0
0
6
12
18
24
30
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.8
1.6
VGS = 10 V
ID = 2.9 A
1.4
1.2
1.0
0.8
0.6
-50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature ( C)
www.kexin.com.cn 3