IRF9Z24N Datasheet, PDF (7/8 Pages) International Rectifier – Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A)

IRF9Z24N
Peak Diode Recovery dv/dt Test Circuit
D.U.T*
+
‚
-
+
Circuit Layout Considerations
• Low Stray Inductance
ƒ
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
-
„
+

R_G
V_GS
• dv/dt controlled by R_G
• I_SD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
+
- ^VDD
* Reverse Polarity of D.U.T for P-Channel
2014-8-9
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
[
] ***
V_GS=10V
D.U.T. I_SD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V_DS Waveform _{Diode Recovery}
dv/dt
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
Ripple ≤ 5%
[]
V_DD
[]
I_SD
*** V_GS = 5.0V for Logic Level and 3V Drive Devices
Fig 14. For P-Channel HEXFETS
7
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