IRF9Z24N Datasheet, PDF (4/8 Pages) International Rectifier – Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A)

IRF9Z24N
700
V _GS = 0V ,
f = 1MH z
C _{is s} = C_gs + C _{g d} , C_ds SH OR TED
600
C _rss = C_{g d}
C oss = Cds + C gd
500
C is s
400
C _oss
300
200
C_{rs s}
100
0
A
1
10
100
V _{D S} , Drain-to-Source V oltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
20
I _D = -7.2A
16
V _DS = -44V
V _DS = -28V
12
8
4
FOR TEST CIRCUIT
SEE F IGURE 13
0
A
0
5
10
15
20
25
Q _G , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
T_J = 1 50°C
10
T_J = 25 °C
1
0.1
0.4
VGS = 0V _A
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-V_SD , S ource-to-Drain V oltage (V )
Fig 7. Typical Source-Drain Diode
Forward Voltage
2014-8-9
4
100
OPERATION IN THIS AREA LIM ITED
BY R_{D S(o n)}
1 0µs
10
100µ s
1m s
T_C = 25°C
T_J = 175°C
Sin gle Pu lse
1
1
10
10m s
A
100
-V_DS , Drain-to-Source V oltage (V )
Fig 8. Maximum Safe Operating Area
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