IRF9Z24N Datasheet, PDF (5/8 Pages) International Rectifier – Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A)

12
9
6
3
0
A
25
50
75
100
125
150
175
T_C , C ase T emperature (°C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
10
IRF9Z24N
V_DS
V_GS
R_G
R_D
D.U.T.
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
-
+ V_DD
Fig 10a. Switching Time Test Circuit
V_GS
10%
t_d(on) t_r
t_d(off) t_f
90%
V_DS
Fig 10b. Switching Time Waveforms
D = 0 .5 0
1
0 .2 0
0 .1 0
0 .0 5
0 .0 2
0 .0 1
0.1
S IN G LE P U L S E
(T H ER M AL R ES PON S E)
P_DM
t₁
t₂
Notes:
1. D uty factor D = t1 / t ₂
0.01
0.00001
0.0001
0.001
2. P ea k TJ = P _DM x Z _{th JC} + TC
A
0.01
0.1
1
t₁ , Rectan gular Pulse Duratio n (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
2014-8-9
5
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