IRF9Z24N Datasheet, PDF (3/8 Pages) International Rectifier – Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A)

100
V GS
TOP
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTT OM - 4. 5V
10
20µs PULS E W IDTH
T_Jc = 2 5°C
IRF9Z24N
100
V GS
TOP
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
BOTT OM - 4. 5V
10
-4.5 V
1
A
0.1
1
10
100
-VD _S , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics,
-4.5V ^{20µs PULSE W IDTH}
1
TCJ = 1 75°C
A
0.1
1
10
100
-VD _S , Drain-to-Source V oltage (V )
Fig 2. Typical Output Characteristics,
100
2.0
ID = -12A
1.5
TJ = 2 5 °C
10
T_J = 1 7 5 °C
1.0
V _DS = -2 5 V
20µs PULSE W IDTH
1
A
4
5
6
7
8
9
10
-V_{G S} , Ga te-to-S o urce V oltage (V )
Fig 3. Typical Transfer Characteristics
2014-8-9
3
0.5
0.0
V_GS = -10V
A
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T_J , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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