IRF9Z24N Datasheet, PDF (2/8 Pages) International Rectifier – Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A)

IRF9Z24N
Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
V_(BR)DSS
∆V_(BR)DSS/∆T_J
RDS(on)
VGS(th)
g_fs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
I_DSS
Drain-to-Source Leakage Current
I_GSS
Qg
Q_gs
Q_gd
td(on)
tr
td(off)
t_f
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
L_D
Internal Drain Inductance
L_S
Ciss
C_oss
C_rss
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
-55
–––
–––
-2.0
2.5
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max.
––– –––
-0.05 –––
––– 0.175
––– -4.0
––– –––
––– -25
––– -250
––– 100
––– -100
––– 19
––– 5.1
––– 10
13 –––
55 –––
23 –––
37 –––
4.5 –––
7.5 –––
350 –––
170 –––
92 –––
Units
V
V/°C
Ω
V
S
µA
nA
nC
ns
nH
pF
Conditions
V_GS = 0V, I_D = -250µA
Reference to 25°C, I_D = -1mA
VGS = -10V, ID = -7.2A „
VDS = VGS, ID = -250µA
V_DS = -25V, I_D = -7.2A
V_DS = -55V, V_GS = 0V
V_DS = -44V, V_GS = 0V, T_J = 150°C
VGS = 20V
VGS = -20V
I_D = -7.2A
V_DS = -44V
V_GS = -10V, See Fig. 6 and 13 „
VDD = -28V
ID = -7.2A
R_G = 24Ω
R_D = 3.7Ω, See Fig. 10 „
Between lead,
D
6mm (0.25in.)
from package
G
and center of die contact
S
VGS = 0V
V_DS = -25V
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current
(Body Diode)
I_SM
Pulsed Source Current
(Body Diode) 
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse RecoveryCharge
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
––– ––– -12
A ^{showing the}
integral reverse
G
––– ––– -48
p-n junction diode.
S
––– ––– -1.6
––– 47 71
––– 84 130
V T_J = 25°C, I_S = -7.2A, V_GS = 0V „
ns T_J = 25°C, I_F = -7.2A
µC di/dt = -100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by L_S+L_D)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ Starting T_J = 25°C, L = 3.7mH
R_G = 25Ω, I_AS = -7.2A. (See Figure 12)
ƒ I_SD ≤ -7.2A, di/dt ≤ -280A/µs, V_DD ≤ V_(BR)DSS,
T_J ≤ 175°C
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
2014-8-9
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