FGA25N120AN Datasheet, PDF (5/6 Pages) Fairchild Semiconductor – IGBT

Common Emitter
V = ± 15V, R = 10Ω
GE
G
10
T = 25℃
C
T = 125℃
C
Eon
Eoff
1
0.1
10
20
30
40
50
Collector Current, I [A]
C
Fig 13. Switching Loss vs. Collector Current
FGA25N120AN
16
Common Emitter
14
R = 24Ω
L
T = 25℃
C
12
10
8
600V
400V
6
Vcc = 200V
4
2
0
0 20 40 60 80 100 120 140 160 180 200
Gate Charge, Q [nC]
g
Fig 14. Gate Charge Characteristics
100 Ic MAX (Pulsed)
Ic MAX (Continuous)
10
50µs
100µs
1ms
DC Operation
1
Single Nonrepetitive
0.1 Pulse Tc = 25^oC
Curves must be derated
linearly with increase
in temperature
0.01
0.1
1
10
100
Collector - Emitter Voltage, V [V]
CE
1000
Fig 15. SOA Characteristics
100
10
Safe Operating Area
V = 15V, T = 125℃
1
GE
C
1
10
100
1000
Collector-Emitter Voltage, V [V]
CE
Fig 16. Turn-Off SOA
2014-8-14
10
1
0.1
0.01
0.5
0.2
0.1
0.05
0.02
0.01
1E-3
1E-5
single pulse
1E-4
1E-3
0.01
0.1
Rectangular Pulse Duration [sec]
PPddmm
tt11
tt22
DDuuttyyffaaccttoorrDD==tt11//tt22
PPeeaakkTTjj==PPddmm××ZZththjcjc++TT_CC
1
10
Fig 17. Transient Thermal Impedance of IGBT
5
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