FGA25N120AN Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – IGBT

FGA25N120AN
TO-3P
Features
• High speed switching
• Low saturation voltage : V_CE(sat) = 2.5 V @ I_C = 25A
• High input impedance
General Description
Employing NPT technology, Kersemi AN series of
provides low conduction and switching losses. The AN
series offers an solution for application such as induction
heating (IH), motor control, general purpose inverters and
uninterruptible power supplies (UPS).
Absolute Maximum Ratings T_C = 25°C unless otherwise noted
Symbol
V_CES
V_GES
I_C
I_{CM (1)}
P_D
T_J
T_stg
T_L
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
@ T_C = 25°C
@ T_C = 100°C
@ T_C = 25°C
@ T_C = 100°C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
R_θJC
R_θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
C
G
E
FGA25N120AN
1200
± 20
40
25
75
310
125
-55 to +150
-55 to +150
300
Units
V
V
A
A
A
W
W
°C
°C
°C
Typ.
--
--
Max.
0.4
40
Units
°C/W
°C/W
2014-8-14
1
www.kersemi.com