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FGA25N120AN Datasheet, PDF (2/6 Pages) Fairchild Semiconductor – IGBT
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FGA25N120AN
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
Off Characteristics
BVCES
∆BVCES/
∆TJ
ICES
IGES
Collector-Emitter Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
VGE = 0V, IC = 3mA
VGE = 0V, IC = 3mA
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat)
Collector to Emitter
Saturation Voltage
IC = 25mA, VCE = VGE
IC = 25A, VGE = 15V
IC = 25A, VGE = 15V,
TC = 125°C
IC = 40A, VGE = 15V
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Qg
Qge
Qgc
Le
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Internal Emitter Inductance
VCC = 600 V, IC = 25A,
RG = 10Ω, VGE = 15V,
Inductive Load, TC = 25°C
VCC = 600 V, IC = 25A,
RG = 10Ω, VGE = 15V,
Inductive Load, TC = 125°C
VCE = 600 V, IC = 25A,
VGE = 15V
Measured 5mm from PKG
1200
--
--
--
--
--
V
0.6
--
V/°C
--
3
mA
-- ± 100 nA
3.5
5.5
7.5
V
--
2.5 3.2
V
--
2.9
--
V
--
3.1
--
V
-- 2100 --
pF
--
180
--
pF
--
90
--
pF
--
60
--
ns
--
60
--
ns
--
170
--
ns
--
45
90
ns
--
4.8 7.2
mJ
--
1.0 1.5
mJ
--
5.7 8.7
mJ
--
60
--
ns
--
60
--
ns
--
180
--
ns
--
70
--
ns
--
5.5
--
mJ
--
1.4
--
mJ
--
6.9
--
mJ
--
200 300 nC
--
15
23
nC
--
105 160 nC
--
14
--
nH
2014-8-14
2
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