FGA25N120AN Datasheet, PDF (4/6 Pages) Fairchild Semiconductor – IGBT

4000
3500
3000
2500
2000
1500
1000
500
0
1
Ciss
Common Emitter
V = 0V, f = 1MHz
GE
T = 25℃
C
Coss
Crss
10
Collector-Emitter Voltage, V [V]
CE
Fig 7. Capacitance Characteristics
1000
Common Emitter
V = 600V, V = ± 15V
CC
GE
I = 25A
C
T = 25℃
C
T = 125℃
C
100
td(off)
tf
10
0
10
20
30
40
50
60
70
Gate Resistance, R [Ω]
G
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Common Emitter
V =±
GE
15V,
R
G
=
10Ω
T = 25℃
C
T = 125℃
C
100
tr
td(on)
FGA25N120AN
100
tr
td(on)
10
0
Common Emitter
V = 600V, V = ± 15V
CC
GE
I = 25A
C
T = 25℃
C
T = 125℃
C
10
20
30
40
50
60
70
Gate Resistance, R [Ω]
G
Fig 8. Turn-On Characteristics vs. Gate
Resistance
Common Emitter
V = 600V, V = ± 15V
CC
GE
I = 25A
C
T = 25℃
10
C
T = 125℃
C
Eon
Eoff
1
0
10
20
30
40
50
60
70
Gate Resistance, R [Ω]
G
Fig 10. Switching Loss vs. Gate Resistance
Common Emitter
V =±
GE
15V,
R
G
=
10Ω
T = 25℃
C
T = 125℃
C
100
td(off)
tf
10
20
30
40
50
Collector Current, I [A]
C
Fig 11. Turn-On Characteristics vs.
Collector Current
2014-8-14
4
10
20
30
40
50
Collector Current, I [A]
C
Fig 12. Turn-Off Characteristics vs.
Collector Current
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