FGA25N120AN Datasheet, PDF (3/6 Pages) Fairchild Semiconductor – IGBT

180
T = 25℃
C
160
140
20V
17V
15V
12V
120
100
V = 10V
GE
80
60
40
20
0
0
2
4
6
8
10
Collector-Emitter Voltage, V [V]
CE
Fig 1. Typical Output Characteristics
FGA25N120AN
120
Common Emitter
V = 15V
100
GE
T = 25℃
C
T = 125℃
C
80
60
40
20
0
0
2
4
6
Collector-Emitter Voltage, V [V]
CE
Fig 2. Typical Saturation Voltage Characteristics
4.0
Common Emitter
V = 15V
GE
40A
3.5
3.0
I = 25A
C
2.5
2.0
25
50
75
100
125
Case Temperature, T [℃]
C
Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
50
Vcc = 600V
load Current : peak of square wave
40
30
20
10
Duty cycle : 50%
Tc = 100℃
Powe Dissipation = 60W
0
0.1
1
10
100
Frequency [kHz]
1000
Fig 4. Load Current vs. Frequency
20
Common Emitter
T = 25℃
C
16
12
8
4
40A
25A
I = 12.5A
C
0
0
4
8
12
16
Gate-Emitter Voltage, V [V]
GE
Fig 5. Saturation Voltage vs. V_GE
2014-8-14
20
3
20
Common Emitter
T = 125℃
C
16
12
8
40A
4
25A
I = 12.5A
C
0
0
4
8
12
16
20
Gate-Emitter Voltage, V [V]
GE
Fig 6. Saturation Voltage vs. V_GE
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