BFG410W_2015 Datasheet, PDF (8/12 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 22 GHz wideband transistor

Philips Semiconductors
NPN 22 GHz wideband transistor
Product specification
BFG410W
handbook, full pagewidth
90°
1
135°
0.5
0.2
0.2
0.5
1
180° 0
1.0
2
45°
0.8
0.6
0.4
5
0.2
2
5 40 MHz
0° 0
0.2
5
3 GHz
0.5
−135°
I_C = 10 mA; V_CE = 2 V; Z_o = 50 Ω.
1
−90°
2
−45°
1.0
MGG727
Fig.12 Common emitter output reflection coefficient (S₂₂); typical values.
Noise data
V_CE = 2 V; typical values.
f
I_C
(MHz) (mA)
F_min
(dB)
900
1
0.8
2
0.9
4
1.1
6
1.3
8
1.5
10
1.7
12
1.9
14
2.1
2000 1
1.2
2
1.2
4
1.4
6
1.6
8
1.8
10
2.0
12
2.2
14
2.4
Γ_mag
0.73
0.58
0.40
0.28
0.20
0.14
0.06
0.05
0.64
0.50
0.34
0.25
0.17
0.12
0.05
0.03
Γ_angle
11.2
10.1
10.1
11.0
8.0
10.5
10.1
14.2
35.7
35.8
34.4
33.7
34.5
35.8
38.0
44.8
r_n
(Ω)
0.56
0.43
0.33
0.30
0.30
0.27
0.25
0.26
0.57
0.44
0.37
0.34
0.35
0.34
0.35
0.34
handbook, h³alfpage
Fmin
(dB)
2
(1)
(2)
1
MGG723
0
0
4
8
(1) f = 2 GHz; V_CE = 2 V.
(2) f = 900 MHz; V_CE = 2 V.
12
16
IC (mA)
Fig.13 Minimum noise figure as a function of the
collector current; typical values.
1998 Mar 11
8