BFG410W_2015 Datasheet, PDF (6/12 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 22 GHz wideband transistor

Philips Semiconductors
NPN 22 GHz wideband transistor
Product specification
BFG410W
handbook,³h⁰alfpage
gain
(dB)
20
MSG
MGG721
Gmax
10
0
0
4
8
12
16
IC (mA)
V_CE = 2 V; f = 2 GHz.
Fig.7 Gain as a function of collector current;
typical values.
handbook,⁵h⁰alfpage
gain
(dB)
40
30
20
10
0
10
MSG
S21
MGG722
10²
10³ _{f (MHz)} 10⁴
I_C = 10 mA; V_CE = 2 V.
Fig.8 Gain as a function of frequency;
typical values.
handbook, full pagewidth
90°
1
135°
0.5
0.2
0.2
180° 0
0.2
0.5
1
3 GHz
2
45°
5
2
5
40 MHz
1.0
0.8
0.6
0.4
0.2
0° 0
5
0.5
−135°
I_C = 10 mA; V_CE = 2 V; Z_o = 50 Ω.
1
−90°
2
−45°
1.0
MGG724
Fig.9 Common emitter input reflection coefficient (S₁₁); typical values.
1998 Mar 11
6