BFG410W_2015 Datasheet, PDF (5/12 Pages) Quanzhou Jinmei Electronic Co.,Ltd. – NPN 22 GHz wideband transistor

Philips Semiconductors
NPN 22 GHz wideband transistor
Product specification
BFG410W
handboo¹k,²h⁰alfpage
hFE
100
MGG717
80
(1)
(2)
(3)
60
40
20
0
0
4
(1) V_CE = 3 V.
(2) V_CE = 2 V.
(3) V_CE = 1 V.
8
12
16
IC (mA)
Fig.3 DC current gain as a function of collector
current; typical values.
handboo¹k,⁰h⁰alfpage
Cre
(fF)
80
60
40
20
0
0
1
2
3
MGG718
4
5
VCB (V)
I_C = 0; f = 1 MHz.
Fig.4 Feedback capacitance as a function of
collector-base voltage; typical values.
handbook,²h⁵alfpage
fT
(GHz)
20
15
10
5
0
1
MGG719
10
IC (mA)
10²
V_CE = 2 V; f = 2 GHz; T_amb = 25 °C.
Fig.5 Transition frequency as a function of
collector current; typical values.
1998 Mar 11
30
handbook, halfpage
MSG
(dB)
20
MGG720
10
0
0
4
8
12
16
IC (mA)
V_CE = 2 V; f = 900 MHz.
Fig.6 Maximum stable gain as a function of
collector current; typical values.
5